?????????????????????????????????????????????????????????????? SSBD10100CTD ? silikron semiconductor co., ltd. 2011.4.19 version: 1.0 page 1of3 www.silikron.com ? ? main product characteristics: if 2 5a vrrm 100v t j (max) 150 vf(max) 0.8v features and benefits: ? ? high junction temperature ? high esd protection ? high forward & reverse surge capability description: to252 ? SSBD10100CTD ? schottky barrier rectifier designed for high frequency switch model power supplies such as adaptors and dc/dc convertors; this product special design for high forward and reverse surge capability absolute rating: symbol characterizes value unit v rrm peak repetitive reverse voltage 100 v v r(rms) rms reverse voltage 70 v per diode 5 a i f(av) average forward current per device 10 a i fsm non repetitive surge forward cu rrent(tp=8.3ms sinusoidal) 90 a i rrm peak repetitive reverse su rge current(tp=2us) 0.5 a t j maximum operation junction temperature range -50~150 t stg storage temperature range -50~150 thermal resistance symbol characterizes value unit r jc maximum thermal resistance junction to case to252 5.5 /w electrical characterizes @t a =25 unless otherwise specified symbol characterizes min typ max unit test condition v r reverse breakdown voltage 100 v i r =0.5ma 0.8 i f =5a, t j =25 v f forward voltage drop 0.75 v i f =5a, t j =125 0.1 v r =100v, t j =25 i r leakage current 5 ma v r =100v, t j =125
?????????????????????????????????????????????????????????????? SSBD10100CTD ? silikron semiconductor co., ltd. 2011.4.19 version: 1.0 page 2of3 www.silikron.com ? ? i-v curves figure 1 typical forward characteristics figure 2 typical reverse characteristics
?????????????????????????????????????????????????????????????? SSBD10100CTD ? silikron semiconductor co., ltd. 2011.4.19 version: 1.0 page 3of3 www.silikron.com ? ? mechanical data to252:
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